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Titel:

High speeds in a single chip

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Kasper, E.; Kissinger, D.; Russer, P.; Weigel, R.
Abstract:
This article reviews the development and breakthrough of SiGe technologies. SiGe HBTs with transit frequencies ft and maximum oscillation frequencies fmax above 300 GHz and monolithic integrated millimeter-wave circuits based on these HBTs have been developed by several groups. As this paper shows in the overview, the combination of active devices with passive planar structures, including antenna elements, allows single-chip realizations of complete millimeter-wave front-ends.
Stichworte:
SiGe, integrated circuit technology, semiconductor materials, active devices, frequency, Ge-Si alloys, Germanium silicon alloys, HBT, heterojunction bipolar transistors, Millimeter wave communication, Millimeter wave integrated circuits, Millimeter wave technology, millimeter wave transistors, millimeter-wave front-ends, MIMIC, monolithic integrated millimeter-wave circuits, passive planar structures, photonic band gap, Silicon germanium
Zeitschriftentitel:
IEEE Microwave Magazine
Jahr:
2009
Band / Volume:
10
Monat:
December
Heft / Issue:
7
Seitenangaben Beitrag:
28--33
Volltext / DOI:
doi:10.1109/MMM.2009.934691
Print-ISSN:
1527-3342
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