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Titel:

SiGe SIMMWICs

Dokumenttyp:
Konferenzbeitrag
Autor(en):
Luy, J.-F.; Russer, P.
Abstract:
Millimeterwave transit time devices are monolithically integrated on a high resistivity silicon substrate. The resonant structure acts as an active antenna at 76.5 GHz with a synchronisation network. Acting as a subharmonic synchronisation oscillator, a coplanar SiGe MMIC for 25.5 GHz power generation is described. The realized module shows a frequency tuning range of \textbackslashtextgreater250 MHz which can be adjusted by the frequency of the synchronisation oscillator
Stichworte:
millimetre wave antennas, SiGe, semiconductor materials, Ge-Si alloys, MIMIC, Si, circuit tuning, millimetre wave oscillators, synchronisation, monolithic integration, MMIC oscillators, active antennas, active antenna, 25.5 GHz, 76.5 GHz, coplanar SiGe MMIC, frequency tuning range, HBT oscillator, high resistivity Si substrate, IMPATT oscillators, millimeter-wave transit time devices, module, modules, resonant structure, SHF power generation, subharmonic synchronisation oscillator, synchronisati...     »
Kongress- / Buchtitel:
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Jahr:
1997
Seiten:
105--108
Volltext / DOI:
doi:10.1109/RFIC.1997.598753
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