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Sharp, I. D.;Yi, D. O.;Xu, Q.;Liao, C. Y.;Beeman, J. W.;Liliental-Weber, Z.;Yu, K. M.;Zakharov, D. N.;Ager, J. W.;Chrzan, D. C.;Haller, E. E.
Mechanism of stress relaxation in Ge nanocrystals embedded in SiO[sub 2]
Appl. Phys. Lett.
2005
86
6
063107
Sharp, I. D.;Xu, Q.;Liao, C. Y.;Yi, D. O.;Beeman, J. W.;Liliental-Weber, Z.;Yu, K. M.;Zakharov, D. N.;Ager, J. W.;Chrzan, D. C.;Haller, E. E.
Stable, freestanding Ge nanocrystals
J. Appl. Phys.
2005
97
12
124316
Xu, Q.;Sharp, I. D.;Yuan, C. W.;Yi, D. O.;Liao, C. Y.;Glaeser, A. M.;Minor, A. M.;Beeman, J. W.;Ridgway, M. C.;Kluth, P.;Ager, J. W.;Chrzan, D. C.;Haller, E. E.
Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO 2
Phys. Rev. Lett.
2006
97
15
Sharp, I. D.;Xu, Q.;Yi, D. O.;Yuan, C. W.;Beeman, J. W.;Yu, K. M.;Ager, J. W.;Chrzan, D. C.;Haller, E. E.
Structural properties of Ge nanocrystals embedded in sapphire
J. Appl. Phys.
2006
100
11
114317
Bracht, H, Silvestri, H.H.;Sharp, I.D.;Haller, E.E.
Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations
Phys. Rev. B
2007
75
3
Sharp, I. D.;Xu, Q.;Yuan, C. W.;Beeman, J. W.;Ager, J. W.;Chrzan, D. C.;Haller, E. E.
Kinetics of visible light photo-oxidation of Ge nanocrystals: Theory and in situ measurement
Appl. Phys. Lett.
2007
90
16
163118
Yi, D. O.;Jhon, M. H.;Sharp, I. D.;Xu, Q.;Yuan, C. W.;Liao, C. Y.;Ager, J. W.;Haller, E. E.;Chrzan, D. C.
Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulations and rate theory
Phys. Rev. B
2008
78
24
Schoell, S.J.;Howgate, J.;Hoeb, M.;Stutzmann, M.;Brandt, M.S.;Sharp, I.D.
Functionalization of n-type 6H-SiC surfaces with organic silanes
Applied Physics Letters
2008
92
Sharp, I. D.;Schoell, S. J.;Hoeb, M.;Brandt, M. S.;Stutzmann, M.
Electronic properties of self-assembled alkyl monolayers on Ge surfaces
Appl. Phys. Lett.
2008
92
22
223306
Schoell, S. J.;Howgate, J.;Hoeb, M.;Auernhammer, M.;Garrido, J. A.;Stutzmann, M.;Brandt, M. S.;Sharp, I. D.
Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination
Appl. Phys. Lett.
2011
98
18
182106
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