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Autor(en):
Wanner, Robert; Lachner, Rudolf; Olbrich, Gerhard R. 
Titel:
Monolithically Integrated SiGe Push-Push Oscillators in the Frequency Range 50-190 GHz 
Abstract:
In this paper we present several monolithically integrated push-push oscillators in the frequency range from 47 GHz to 190 GHz. The MMICs are fabricated in a production near SiGe:C bipolar technology developed by Infineon Technologies AG. The transistors show a maximum transit frequency of fT=200 GHz and a maximum frequency of oscillation fmax=275 GHz. The passive circuitry is realized using integrated transmission-line components, integrated spiral inductors, MIM-capacitors and TaN resistors. T...    »
 
Stichworte:
200 GHz, 275 GHz, 50 to 190 GHz, Ge-Si alloys, Infineon Technologies, integrated transmission-line component, millimetre wave oscillators, MIM-capacitor, MMIC, MMIC oscillators, monolithically integrated push-push oscillator, passive circuit, passive networks, SiGe, SiGe:C bipolar technology, spiral inductor, TaN resistor, tuning varactor 
Kongress- / Buchtitel:
IEEE Ninth International Symposium on Spread Spectrum Techniques and Applications (ISSSTA) 
Verlagsort:
Manaus, Amazon, Brazil 
Jahr:
2006 
Monat:
aug 
Seiten:
26--30