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Autor(en):
Wanner, Robert; Lachner, Rudolf; Olbrich, Gerhard R. 
Titel:
A SiGe Monolithically Integrated 75 GHz Push-Push VCO 
Abstract:
In this paper we present a fully monolithically integrated push-push VCO fabricated in a production-near SiGe:C bipolar technology. The output frequency of the oscillator can be varactor tuned from 71.3 GHz to 75.8 GHz. In this tuning range the measured output power is 3.5 /spl plusmn/ 0.4 dBm and the measured single sideband phase noise is less than -105dBc/Hz at 1MHz offset frequency. The SiGe:C bipolar transistors show a maximum transit frequency f/sub T/ = 200 GHz and a maximum frequency of...    »
 
Stichworte:
200 GHz, 275 GHz, 71.3 to 75.8 GHz, bipolar transistors, capacitors, Ge-Si alloys, integrated resistors, millimetre wave oscillators, MIM devices, MIM-capacitors, MMIC oscillators, monolithically integrated push-push VCO, resistors, SiGe, transmission-line components, voltage controlled oscillator, voltage-controlled oscillators 
Kongress- / Buchtitel:
Digest of Papers of Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 
Verlagsort:
San Diego, CA, USA 
Jahr:
2006 
Monat:
jan 
Seiten:
375--378