Benutzer: Gast  Login
Autor(en):
Wanner, Robert; Schäfer, Herbert; Lachner, Rudolf; Olbrich, Gerhard R.; Russer, Peter 
Titel:
A fully integrated 70 GHz SiGe low phase noise push-push oscillator 
Abstract:
This paper describes a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/ = 200 GHz and a maximum frequency of oscillation f/sub max/ = 275 GHz. For the passive circuitry transmission-line components, integrated spiral inductors and MIM-capacitors are used. The oscillator output frequency can be tuned from 63 GHz to 72 GHz. In this frequency range the output po...    »
 
Stichworte:
200 GHz, 275 GHz, 63 to 72 GHz, bipolar technology, capacitors, carbon, fully monolithically integrated push-push oscillator, Ge-Si alloys, inductors, integrated circuit noise, integrated spiral inductors, low phase noise push-push oscillator, MIM devices, MIM-capacitors, MMIC oscillators, passive circuitry, phase noise, SiGe:C, transmission-line components 
Kongress- / Buchtitel:
IEEE MTT-S International Microwave Symposium 
Verlagsort:
Long Beach, USA 
Jahr:
2005 
Monat:
jun 
Seiten:
1523--1526 
Print-ISBN:
01490-645X