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Autor(en):
Wanner, Robert; Lachner, Rudolf; Olbrich, Gerhard R. 
Titel:
A monolithically integrated 190-GHz SiGe push-push oscillator 
Abstract:
In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation 
Stichworte:
190 GHz, 200 GHz, 275 GHz, bipolar MIMIC, bipolar technology, carbon, G-band push-push oscillator, Ge-Si alloys, Heterojunction bipolar transistor (HBT), heterojunction bipolar transistor technology, integrated transmission-line components, metal-insulator-metal capacitors, millimeter wave integrated circuits, millimetre wave oscillators, MIMIC oscillators, monolithic integrated push-push oscillator, monolithic microwave integrated circuit (MMIC) oscillators, monolithic microwave integrated circ...    »
 
Zeitschriftentitel:
IEEE Microwave and Wireless Components Letters 
Jahr:
2005 
Band / Volume:
15 
Monat:
dec 
Heft / Issue:
12 
Seitenangaben Beitrag:
862--864 
Print-ISSN:
1531-1309