Wanner, Robert; Lachner, Rudolf; Olbrich, Gerhard R.
A monolithically integrated 190-GHz SiGe push-push oscillator
In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation