190 GHz, 200 GHz, 275 GHz, bipolar MIMIC, bipolar technology, carbon, G-band push-push oscillator, Ge-Si alloys, Heterojunction bipolar transistor (HBT), heterojunction bipolar transistor technology, integrated transmission-line components, metal-insulator-metal capacitors, millimeter wave integrated circuits, millimetre wave oscillators, MIMIC oscillators, monolithic integrated push-push oscillator, monolithic microwave integrated circuit (MMIC) oscillators, monolithic microwave integrated circuit oscillators, passive circuitry, resistors, SiGe heterojunction bipolar transistor (HBT), SiGe:C
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190 GHz, 200 GHz, 275 GHz, bipolar MIMIC, bipolar technology, carbon, G-band push-push oscillator, Ge-Si alloys, Heterojunction bipolar transistor (HBT), heterojunction bipolar transistor technology, integrated transmission-line components, metal-insulator-metal capacitors, millimeter wave integrated circuits, millimetre wave oscillators, MIMIC oscillators, monolithic integrated push-push oscillator, monolithic microwave integrated circuit (MMIC) oscillators, monolithic microwave integrated circ...
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