Benutzer: Gast  Login
Autor(en):
Wanner, Robert; Lachner, Rudolf; Olbrich, Gerhard R. 
Titel:
Low phase noise SiGe push-push oscillators for cm- and mm-wave applications 
Abstract:
In this paper, we present several monolithically integrated push-push oscillators in the frequency range from 47 GHz to 190 GHz. The MMICs are fabricated in a production near SiGe:C bipolar technology developed by Infineon Technologies AG. The transistors show a maximum transit frequency of f/sub T/ = 200 GHz and a maximum frequency of oscillation f/sub max/ = 275 GHz. The passive circuitry is realized using integrated transmission-line components, integrated spiral inductors, MIM-capacitors and...    »
 
Stichworte:
200 GHz, 275 GHz, 47 to 190 GHz, base collector junction, bipolar analogue integrated circuits, bipolar MIMIC, capacitance variation, circuit tuning, cm-wave applications, Ge-Si alloys, HBT oscillators, integrated spiral inductors, integrated transmission-line components, low phase noise, millimetre wave oscillators, MIM-capacitors, MMIC circuits, MMIC oscillators, mm-wave applications, monolithically integrated push-push oscillators, passive circuitry, passive networks, phase noise, SiGe:C, sil...    »
 
Kongress- / Buchtitel:
17th Asia-Pacific Microwave Conference (APMC) 
Band / Teilband / Volume:
Verlagsort:
Suhzhou, China 
Jahr:
2005 
Monat:
dec 
Seiten:
1075--1078