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Autor(en):
Wanner, Robert; Olbrich, Gerhard R.; Jorke, H.; Luy, Johann-Friedrich; Heim, Sandra; Kasper, Erich; Russer, Peter 
Titel:
Experimental Verification of the Resonance Phase Transistor Concept 
Abstract:
In this paper we describe the experimental verification of the resonance phase effect for the first time. A silicon heterojunction bipolar transistor (HBT) has been enhanced to a resonance phase transistor (RPT) by the concept of transit time delay, using a thickened base layer. The RPT shows a current amplification far beyond its transit frequency f/sub T/. As the purpose of this paper is to demonstrate the resonance phase effect, a thick base layer of 120 nm was incorporated, thus decreasing t...    »
 
Stichworte:
120 nm, 40 GHz, 6.5 dB, current amplification, elemental semiconductors, HBT, heterojunction bipolar transistors, millimetre wave transistors, resonance frequency, resonance phase effect, resonance phase transistor, Si, silicon, silicon heterojunction bipolar transistor, transit frequency, transit time delay 
Kongress- / Buchtitel:
IEEE MTT-S International Microwave Symposium 
Band / Teilband / Volume:
Verlagsort:
Philadelphia, PA, USA 
Jahr:
2004 
Monat:
jun 
Seiten:
991--993 
Print-ISBN:
0149-645X