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Author(s):
Wanner, Robert; Olbrich, Gerhard R.; Jorke, H.; Luy, Johann-Friedrich; Heim, Sandra; Kasper, Erich; Russer, Peter 
Title:
Experimental Verification of the Resonance Phase Transistor Concept 
Abstract:
In this paper we describe the experimental verification of the resonance phase effect for the first time. A silicon heterojunction bipolar transistor (HBT) has been enhanced to a resonance phase transistor (RPT) by the concept of transit time delay, using a thickened base layer. The RPT shows a current amplification far beyond its transit frequency f/sub T/. As the purpose of this paper is to demonstrate the resonance phase effect, a thick base layer of 120 nm was incorporated, thus decreasing t...    »
 
Keywords:
120 nm, 40 GHz, 6.5 dB, current amplification, elemental semiconductors, HBT, heterojunction bipolar transistors, millimetre wave transistors, resonance frequency, resonance phase effect, resonance phase transistor, Si, silicon, silicon heterojunction bipolar transistor, transit frequency, transit time delay 
Book / Congress title:
IEEE MTT-S International Microwave Symposium 
Volume:
Publisher address:
Philadelphia, PA, USA 
Year:
2004 
Month:
jun 
Pages:
991--993 
Print-ISBN:
0149-645X