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Autor(en):
Choi, Jung Han; Weiske, C.-J.; Olbrich, Gerhard R.; Russer, Peter
Titel:
Flip-Chip Bonded Si Schottky Diode Sampling Circuits for High Speed Demultiplexers
Abstract:
This paper presents a Si Schottky diode sampling circuit for demultiplexer using flip-chip technology on alumina substrate (Al/sub 2/O/sub 3/). In order to design circuits, very high speed Si Schottky diodes, having cutoff frequency of 750 GHz, were modeled using the Root diode model and flip-chip interconnection was simulated using 3 dimensional electromagnetic simulator, HFSS.
Stichworte:
750 GHz, Al/sub 2/O/sub 3/, alumina substrate, demultiplexing equipment, elemental semiconductors, flip-chip bonding, flip-chip devices, HFSS, high-speed demultiplexer, Root diode model, Schottky diodes, Si, Si Schottky diode sampling circuit, signal processing equipment, silicon, three-dimensional electromagnetic simulation
Kongress- / Buchtitel:
IEEE MTT-S International Microwave Symposium
Band / Teilband / Volume:
3
Verlagsort:
Philadelphia, PA, USA
Jahr:
2003
Monat:
jun
Seiten:
1515--1518
Print-ISBN:
0149-645X
Volltext / DOI:
doi:10.1109/MWSYM.2003.1210424
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