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Autor(en):
Olbrich, Gerhard R. 
Titel:
Low Phase Noise SiGe Push-Push Oscillators for V-Band Operation 
Abstract:
The application of the push-push principle to oscillator design allows the extension of the usable frequency range of transistors for signal generating applications. In this paper, we present several V-band SiGe HBT push-push oscillators using both microstrip transmission line resonators as well as dielectric resonators. The circuits are fabricated in thin film technology on alumina substrates. Measured data of the microstrip transmission line oscillators are an output power of -5.6 dBm and a si...    »
 
Stichworte:
50 GHz, 57 GHz, 58 GHz, Altextlesssubtextgreater2textless/subtextgreaterOtextlesssubtextgreater3textless/subtextgreater, alumina, alumina substrates, dielectric resonator oscillators, dielectric resonators, Ge-Si alloys, heterojunction bipolar transistors, hybrid integrated circuits, integrated circuit noise, low phase noise oscillators, microstrip resonators, microstrip transmission line resonators, millimetre wave integrated circuits, millimetre wave oscillators, phase noise, semiconductor mat...    »
 
Kongress- / Buchtitel:
3rd International Conference on Microwave and Millimeter Wave Technology (ICMMT) 
Verlagsort:
Bejing, China 
Jahr:
2002 
Monat:
aug 
Seiten:
78--81