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Autor(en):
Sinnesbichler, Franz X.; Olbrich, Gerhard R. 
Titel:
Accurate Large-Signal Modeling of SiGe HBTs 
Abstract:
Accurate large-signal modeling is a prerequisite for any effective nonlinear circuit design. We present a novel large signal model for SiGe HBTs that accurately describes the electrical and thermal behavior of the devices from DC to 40 GHz, covering the entire range of bias conditions. It combines the Gummel-Poon model with elements of the VBIC and the HICUM models as well as with specific extensions for SiGe HBTs. The model, which has been implemented into commercial circuit simulation programs...    »
 
Stichworte:
0 to 40 GHz, circuit simulation, Ge-Si alloys, Gummel-Poon model, heterojunction bipolar transistors, HICUM model, large-signal model, millimeter-wave oscillator, millimetre wave bipolar transistors, nonlinear circuit design, semiconductor device models, semiconductor materials, SiGe, SiGe HBT, VBIC model 
Kongress- / Buchtitel:
IEEE MTT-S International Microwave Symposium 
Band / Teilband / Volume:
Verlagsort:
Boston, MA, USA 
Jahr:
2000 
Monat:
jun 
Seiten:
749--752