Benutzer: Gast  Login
Autor(en):
Sinnesbichler, Franz X.; Hautz, B.; Olbrich, Gerhard R. 
Titel:
A SiGe HBT Dielectric Resonator Push-Push Oscillators at 58 GHz 
Abstract:
In this work, we present a dielectric resonator push-push oscillator at 58 GHz. The microstrip circuit is fabricated in hybrid thin-film technology on a 10 mil alumina substrate. Flip-chip bonded Si/SiGe HBT's are used as active devices. A maximum output power of -8 dBm and a phase noise of -105 dBc/Hz at an offset frequency of 1 MHz have been measured. At a lower output power of -14 dBm an optimum phase noise of -112 dBc/Hz has been achieved. The mechanical tuning range of the oscillator is app...    »
 
Stichworte:
10 mil, 58 GHz, Altextlesssubtextgreater2textless/subtextgreaterOtextlesssubtextgreater3textless/subtextgreater, alumina substrate, circuit tuning, dielectric resonator modelling, dielectric resonator oscillators, EHF, elemental semiconductors, flip-chip bonded HBTs, flip-chip devices, Ge-Si alloys, HBT DR push-push oscillator, heterojunction bipolar transistors, hybrid integrated circuits, hybrid thin-film technology, mechanical tuning range, microstrip circuit, microstrip circuits, millimetre...    »
 
Zeitschriftentitel:
IEEE Microwave and Guided Wave Letters 
Jahr:
2000 
Band / Volume:
10 
Monat:
apr 
Heft / Issue:
Seitenangaben Beitrag:
145--147 
Print-ISSN:
1051-8207