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Autor(en):
Sinnesbichler, Franz X.; Geltinger, Hans; Olbrich, Gerhard R. 
Titel:
A 38-GHz Push-Push Oscillator Based on 25-GHz f_T BJT's 
Abstract:
In this work, we present a 38 GHz push-push oscillator based on low-cost state-of-the-art silicon bipolar junction transistors (BJTs) with transit frequencies of approximately 25 GHz. The push-push principle allows the extension of the usable frequency range of the well-established silicon bipolar technology (with its specific advantages, as, for example, a low 1/f-noise) into the K and the Ka bands. The circuitry has been fabricated in thin film technology on a 10-mil alumina substrate. The out...    »
 
Stichworte:
10 mil, 25 GHz, 38 GHz, Altextlesssubtextgreater2textless/subtextgreaterOtextlesssubtextgreater3textless/subtextgreater, alumina, alumina substrate, bipolar junction transistors, bipolar transistor circuits, equivalent circuits, hybrid integrated circuits, integrated circuit noise, Ka-band, K-band, low 1/f-noise, microstrip circuits, millimetre wave integrated circuits, millimetre wave oscillators, phase noise, power combiners, push-push oscillator, Si BJTs, single-sideband phase noise, thin fil...    »
 
Zeitschriftentitel:
IEEE Microwave and Guided Wave Letters 
Jahr:
1999 
Band / Volume:
Monat:
apr 
Heft / Issue:
Seitenangaben Beitrag:
151--153 
Print-ISSN:
1051-8207