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Dokumenttyp:
Zeitschriftenaufsatz 
Autor(en):
Popescu, D.; Popescu, B.; Jegert, G.; Schmelzer, S.; Boettger, U.; Lugli, P. 
Titel:
Feasibility Study of SrRuO3/SrTiO3/SrRuO3 Thin Film Capacitors in DRAM Applications 
Abstract:
In this paper, we have investigated the leakage current versus voltage characteristic of high-k thin film capacitors over a large temperature range. Fabricated samples, consisting of a 10-nm thin SrTiO3 (STO) layer as a dielectric material and SrRuO3 as electrodes, have been examined. Electrical measurements performed at different temperatures reveal leakage currents that exceed 10−7 A/cm2 at 1 V, a requirement needed for dynamic random access memory (DRAM) applications. We perfo...    »
 
Stichworte:
Dynamic random access memory (DRAM) cell, feasibility study, high-k dielectric, leakage current, simulation, SrRuO3 (SRO)/SrTiO3 (STO)/SRO material system. 
Zeitschriftentitel:
Electron Devices, IEEE Transactions on (Volume:61 , Issue: 6 ) 
Jahr:
2014 
Jahr / Monat:
2014-06 
Quartal:
2. Quartal 
Monat:
Jun 
Seitenangaben Beitrag:
2130 - 2135 
Sprache:
en 
Verlag / Institution:
IEEE Xplore Digital Library