The talk will focus on material and cell design aspects of resistive memory technologies with a focus on bipolar operation. Starting from the basic switching physics in resistive memories the talk will explain the effect of the local electromagnetic environment and its impact on the switching characteristic. This will explain the commonly observed fact that memory cells have low on-state resistance (typically below 40 kOhm). This low on-resistance, in turn, is not compatible with aggressively scaled architectures, where access devices limit the available current for switching. Strategies for cell designs will be discussed which can bring the on-state resistance into a regime which is compatible with low operating currents. However, not all of them are compatible with integration schemes, temperature budgets and required retention. Suggestions for improvement will be discussed.     «

The talk will focus on material and cell design aspects of resistive memory technologies with a focus on bipolar operation. Starting from the basic switching physics in resistive memories the talk will explain the effect of the local electromagnetic environment and its impact on the switching characteristic. This will explain the commonly observed fact that memory cells have low on-state resistance (typically below 40 kOhm). This low on-resistance, in turn, is not compatible with aggressively...     »