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Dokumenttyp:
Konferenzbeitrag 
Autor(en):
Weber, WM.; Geelhaar, L.; Lamagna, L.; Fanciulli, M., Kreupl, F.; Unger, E.; Riechert, H.; Scarpa, G.; Lugli, P. 
Titel:
Tuning the polarity of Si-nanowire transistors without the use of doping 
Abstract:
In this article, a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region, is presented. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts. (2 References). 
Kongress- / Buchtitel:
2008 8th IEEE Conference on Nanotechnology (NANO). IEEE. 
Kongress / Zusatzinformationen:
Arlington TX USA, Aug 18 - 21, 2008 
Jahr:
2008 
Quartal:
3. Quartal 
Jahr / Monat:
2008-08 
Monat:
Aug 
Seiten:
580-581 
Sprache:
en 
Format:
Text