Weber, WM.; Geelhaar, L.; Lamagna, L.; Fanciulli, M., Kreupl, F.; Unger, E.; Riechert, H.; Scarpa, G.; Lugli, P.
Tuning the polarity of Si-nanowire transistors without the use of doping
In this article, a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region, is presented. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts. (2 References).
Kongress- / Buchtitel:
2008 8th IEEE Conference on Nanotechnology (NANO). IEEE.