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Document type:
Konferenzbeitrag 
Contribution type:
Vortrag / Präsentation 
Author(s):
Kaczer, B.; Larcher, L.; Vandelli, L.; Reisinger, H.; Popovici, M.; Clima, S.; Ji , Z.; Joshi, S.; Swerts, J.; Redolfi, A.; Afanas’ev, V.V.; Jurczak, M. 
Title:
SrTiO 3 for sub-20 nm DRAM technology nodes—characterization and modeling 
Abstract:
The electrical properties of Ru/SrTiOx/Ru capacitors have been investigated. Equivalent Oxide Thickness (EOT) of 0.38 nm at 0 V and current density of 10−7 A cm−2 at ±1 V and 25 °C meet the sub-20 nm DRAM requirements. Relaxation measurements were performed, indicating acceptable charge loss. Modeling of charge trapping at defect sites based on multi-phonon trap-assisted-tunneling quantitatively well describes leakage and capacitance behavior. Highlights • Metal–Insulator–Metal capacitors wi...    »
 
Keywords:
Dopamine, Carbon nanotubes, flexible, Solution processable, electrolyte gate 
Book / Congress title:
SISC 2014 45 th IEEE Semiconductor Interface Specialists Conference, Session 12 - Memory Session Chair: M. Passlack 12.3 
Congress (additional information):
San Diego CA USA, 10-13 Dec 2014 2014-12 
Publisher:
IEEE Xplore Digital Library 
Year:
2014 
Quarter:
4. Quartal 
Year / month:
2014-12 
Month:
Dec 
Language:
en