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Dokumenttyp:
Zeitschriftenaufsatz 
Autor(en):
Enzmann, R.; Bareiß, M.; Baierl, D.; Hauke, N.; Boehm, G.; Meyer, R.; Finley, J.; Amann, M.C. 
Titel:
Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(001) 
Abstract:
We present detailed growth studies of InAs nanostructures grown on AlxGayIn(1−x−y)As lattice matched to an InP(0 0 1) substrate using molecular beam epitaxy. Highly elongated quantum dash like structures are typically favoured in this material system, due to very anisotropic migration lengths along the [1 −1 0] and [1 1 0] directions. In order to increase the short migration length along the [1 1 0]-direction we used ultra low growth rates down to 3×10−3 monolayers per second. We show that this...    »
 
Stichworte:
A3. Molecular beam epitaxy; A1. Nanostructures; A1. Quantum dot; B1. InP-substrate; B1. AlGaInAs; B2. 1.55 μm 
Zeitschriftentitel:
Journal of Crystal Growth Volume 312, Issues 16–17, 1–15 August 2010, Pages 2300–2304 
Jahr:
2010 
Jahr / Monat:
2010-08 
Quartal:
3. Quartal 
Monat:
Aug 
Seitenangaben Beitrag:
2300 - 2304 
Reviewed:
ja 
Sprache:
en 
Verlag / Institution:
Elsevier B.V. 
Semester:
SS 02 
Format:
Text