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Document type:
Zeitschriftenaufsatz 
Author(s):
Fahem, Z.; Csaba, G.; Erlen, C.M.; Lugli, P.; Weber, W.M.; Geelhaar, L.; Riechert, H. 
Title:
Analysis of the hysteretic behavior of silicon nanowire transistors 
Abstract:
We e present a combined experimental and theoretical analysis of the transport properties of silicon nanowire (NW) transistors. The NWs are grown by catalytic chemical vapour deposition and are later deposited on pre-patterned oxidized silicon substrates that provide the device source and drain electrodes. A back gate configuration is used for our study. Through a controlled nickel diffusion, parts of the nominally undoped NWs are turned into nickel silicide NWs. thus providing a direct metallic...    »
 
Journal title:
physica status solidi (c) Special Issue: 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCTS-15) Volume 5, Issue 1, pages 27 
Journal title abbreviation:
PSS 
Year:
2008 
Year / month:
2008-01 
Quarter:
1. Quartal 
Month:
Jan 
Pages contribution:
27-30 
Language:
en 
Fulltext / DOI:
Format:
Text 
Ingested:
24.01.2008 
Last change:
24.01.2008