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Dokumenttyp:
Zeitschriftenaufsatz 
Autor(en):
Fahem, Z.; Csaba, G.; Erlen, C.M.; Lugli, P.; Weber, W.M.; Geelhaar, L.; Riechert, H. 
Titel:
Analysis of the hysteretic behavior of silicon nanowire transistors 
Abstract:
We e present a combined experimental and theoretical analysis of the transport properties of silicon nanowire (NW) transistors. The NWs are grown by catalytic chemical vapour deposition and are later deposited on pre-patterned oxidized silicon substrates that provide the device source and drain electrodes. A back gate configuration is used for our study. Through a controlled nickel diffusion, parts of the nominally undoped NWs are turned into nickel silicide NWs. thus providing a direct metallic...    »
 
Zeitschriftentitel:
physica status solidi (c) Special Issue: 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCTS-15) Volume 5, Issue 1, pages 27 
Zeitschriftentitel:
PSS 
Jahr:
2008 
Jahr / Monat:
2008-01 
Quartal:
1. Quartal 
Monat:
Jan 
Seitenangaben Beitrag:
27-30 
Sprache:
en 
Format:
Text 
Eingabe:
24.01.2008 
Letzte Änderung:
24.01.2008