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- Dokumenttyp:
- Patent
- Patent, Gebrauchsmuster Nr.:
- US 8686419 B2
- Erfinder:
- Franz Kreupl (Mountain View, CA), Deepak C Sekar; (San Jose, CA)
- Patentanmelder:
- Franz Kreupl (Mountain View, CA), Deepak C Sekar; (San Jose, CA)
- Titel:
- Structure and fabrication method for resistance-change memory cell in 3-D memory
- Abstract:
- A memory device in a 3-D read and write memory includes a resistance-changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction between a semiconductor layer and a metal layer. Further, the local contact resistance has a specified level of resistance according to a doping concentration of the semiconductor and a barrier height of the junction. A method for fabricating such a memory device i... »
- Anmeldeland:
- US
- Veröffentlichungsdatum / Patent:
- 01.04.2014
- Jahr:
- 2014
- Seiten/Umfang:
- 29 pages
- Sprache:
- en
- Nachgewiesen in:
- Scopus
- TUM Einrichtung:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX