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Dokumenttyp:
Patent 
Patent, Gebrauchsmuster Nr.:
US000008987046B2 
Erfinder:
SEKAR DEEPAK C, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; RABKIN PETER, US ; 
Patentanmelder:
SEKAR DEEPAK C, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; RABKIN PETER, US ; 
Titel:
Trap passivation in memory cell with metal oxide switching element 
Abstract:
Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the re...    »
 
Anmeldeland:
us 
Veröffentlichungsdatum / Patent:
24.03.2015 
Jahr:
2015 
Sprache:
en 
Nachgewiesen in:
Scopus 
TUM Einrichtung:
Hybride Elektronische Systeme 
Format:
Text