Benutzer: Gast  Login
Dokumenttyp:
Zeitschriftenaufsatz 
Autor(en):
Sterkel, M.; Wang, P.F.; Nirschl, T.; Fabel, B.; Buhwalka, K.; Eisele, I.; Schmitt-Landsiedel, D.; Hansch, W. 
Titel:
Characteristics and optimisation of vertical and planar tunnelling-FETs 
Abstract:
Scaling MOSFETs becomes more and more difficult. The tunnelling-FET is a possible successor of today’s MOSFET with better scaling possibilities. Two different device structures, a vertical and a planar version of a tunnelling-FET are presented and evaluated. 
Kongresstitel:
Second Conference on Microelectronics, Microsystems and Nanotechnology (MMN), Munich, 2004 
Zeitschriftentitel:
Journal of Physics: Conference Series 10 (2005) 15–18 
Jahr:
2004 
Sprache:
en 
Verlag / Institution:
IOP Publishing, Institute of Physics Publishing