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Dokumenttyp:
Zeitschriftenaufsatz 
Autor(en):
Sacconi, F.; Di Carlo, A.; Lugli, P. 
Titel:
Modeling of GaN-Based Resonant Tunneling Diodes: Influence of Polarization Fields 
Abstract:
Resonant tunneling diodes (RTD) based on GaN/AlGaN heterojunctions should in principle show high values of peak/valley ratio due to the large conduction band discontinuities between GaN and AlGaN. Moreover, such structures have been studied to be used in quantum cascade lasers for near infrared emission. However, polarization fields can mask such benefits and make the design of RTD quite complicated. In this work, we have applied an atomistic point of view to describe current flowing in GaN-base...    »
 
Stichworte:
73.21.Fg; 73.40.Gk; 73.61.Ey; S7.14 
Zeitschriftentitel:
physica status solidi (a) Volume 190, Issue 1, pages 295–299, March 2002 
Jahr:
2002 
Jahr / Monat:
2002-03 
Quartal:
1. Quartal 
Monat:
Mar 
Seitenangaben Beitrag:
295 - 299 
Sprache:
en 
Verlag / Institution:
WILEY-VCH Verlag GmbH & Co. KGaA