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Document type:
Zeitschriftenaufsatz 
Author(s):
Weber, W.M.; Duesberg, G.S.; Graham, A.P.; Liebau, M.; Unger, E.; Cheze, C.; Geelhaar, L.; Lugli, P.; Riechert, H.; Kreupl, F. 
Title:
Silicon nanowires: catalytic growth and electrical characterization 
Abstract:
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 13 to 30 nm thin nominally undoped Si-NWs as...    »
 
Keywords:
68.37.−d; 68.65.La; 73.63.Nm; 81.15.Gh; 81.16.Be; 85.30.Tv 
Journal title:
physica status solidi (b) Volume 243, Issue 13, pages 3340–3345, November 2006 
Year:
2006 
Year / month:
2006-11 
Quarter:
4. Quartal 
Month:
Nov 
Language:
en 
Fulltext / DOI:
Publisher:
John Wiley & Sons, Inc.