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- Document type:
- Patentanmeldung
- Patent application number:
- KR20130036292 (A)
- Inventor:
- KREUPL FRANZ [US]; FU CHU CHEN [US]; NIAN YIBO [CN]
- Assignee:
- KREUPL FRANZ [US]; FU CHU CHEN [US]; NIAN YIBO [CN]
- Title:
- KR MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER
- Patent office:
- KR
- Publication date application:
- 11.04.2013
- Year:
- 2013
- Language:
- Sonstige
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX