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Document type:
Patentanmeldung 
Patent application number:
KR20130036292 (A) 
Inventor:
KREUPL FRANZ [US]; FU CHU CHEN [US]; NIAN YIBO [CN] 
Assignee:
KREUPL FRANZ [US]; FU CHU CHEN [US]; NIAN YIBO [CN] 
Title:
KR MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER 
Patent office:
KR 
Publication date application:
11.04.2013 
Year:
2013 
Language:
Sonstige 
Covered by:
Scopus 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text