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Dokumenttyp:
Patentanmeldung 
Patentanmeldung Nr.:
US 2012243337 (A1) 
Erfinder:
LEE SANGHYUN [US]; DUNGA MOHAN [US]; HIGASHITANI MASAAKI [US]; PHAM TUAN [US]; KREUPL FRANZ [DE] 
Patentanmelder:
LEE SANGHYUN [US]; DUNGA MOHAN [US]; HIGASHITANI MASAAKI [US]; PHAM TUAN [US]; KREUPL FRANZ [DE] 
Titel:
P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT 
Abstract:
Non-volatile storage elements having a P-/metal floating gate are disclosed herein. The floating gate may have a P- region near the tunnel oxide, and may have a metal region near the control gate. A P- region near the tunnel oxide helps provide good data retention. A metal region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also, erasing the non-volatile storage eleme...    »
 
Anmeldeland:
US 
Veröffentlichungsdatum / Anmeldung:
27.09.2012 
Jahr:
2012 
Sprache:
en 
TUM Einrichtung:
Hybride Elektronische Systeme 
Format:
Text