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Document type:
Patent 
Patent number:
US 8,237,146 
Inventor:
Kreupl; Franz (Mountain View, CA), Zhang; Jingyan (Santa Clara, CA), Xu; Huiwen (Sunnyvale, CA) 
Assignee:
Kreupl; Franz (Mountain View, CA), Zhang; Jingyan (Santa Clara, CA), Xu; Huiwen (Sunnyvale, CA) 
Title:
Memory cell with silicon-containing carbon switching layer and methods for forming the same 
Patent office:
US 
Publication date patent:
07.08.2012 
Year:
2012 
Language:
en 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text