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Document type:
Patentanmeldung 
Patent application number:
TW 201212318 A 
Inventor:
KREUPL FRANZ, DE SHRIVASTAVA RITU, US 
Assignee:
KREUPL FRANZ, DE SHRIVASTAVA RITU, US 
Title:
TW 201212318 A Memory cell with resistance-switching layers and lateral arrangement 
Patent office:
TW 
Publication date application:
16.03.2012 
Year:
2012 
Language:
Sonstige 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text