User: Guest  Login
Document type:
Patentanmeldung 
Patent application number:
WO002011159582A2 
Inventor:
KREUPL FRANZ, US SHRIVASTAVA RITU, US 
Assignee:
KREUPL FRANZ, US SHRIVASTAVA RITU, US 
Title:
MEMORY CELL WITH RESISTANCE- SWITCHING LAYERS AND LATERAL ARRANGEMENT 
Patent office:
WO 
Publication date application:
22.12.2011 
Year:
2011 
Pages:
77 pages 
Language:
en 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text