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KLOSTERMANN ULRICH ; SCHWERIN ULRIKE GRUENING-VON ; KREUPL FRANZ
Integrated circuit including doped semiconductor line having conductive cladding
2011
Kreupl; Franz ,Klostermann; Ulrich, Schwerin; Ulrike Gruning-von
Integrated circuit including doped semiconductor line having conductive cladding
2011
KREUPL FRANZ, DE COSTA XIYING, US KAI JAMES, US MAKALA
MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS
2011
77 pages
KREUPL FRANZ, US SHRIVASTAVA RITU, US
MEMORY CELL WITH RESISTANCE- SWITCHING LAYERS AND LATERAL ARRANGEMENT
2011
77 pages
KREUPL FRANZ, DE BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US MAKALA RAGHUVEER S, US RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US
COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS
2011
79 pages
KREUPL FRANZ, US FU CHU-CHEN, US NIAN YIBO, US
MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER
2011
79 pages
KREUPL FRANZ, DE COSTA XIYING, US KAI JAMES, US MAKALA RAGHUVEER S, US
Memory Cell With Resistance-Switching Layers
2011
KREUPL FRANZ, DE SHRIVASTAVA RITU, US
Memory Cell With Resistance-Switching Layers And Lateral Arrangement
2011
KREUPL FRANZ, DE BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US MAKALA RAGHUVEER S, US RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US
Composition Of Memory Cell With Resistance-Switching Layers
2011
KREUPL FRANZ, DE KUND MICHAEL, DE MAJEWSKI PETRA, DE RUESTER CHRISTIAN, DE RUF BERNHARD, DE SYMANCZYK RALF, DE UFERT KLAUS-DIETER, DE
Integrated circuit
2011
34 pages
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