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Document type:
Patent 
Patent number:
US 7425487 (B2) 
Inventor:
KREUPL, FRANZ [DE]; SEIDEL, ROBERT [DE] 
Title:
Method for Fabricating a Nanoelement Field Effect Transistor with Surrounded Gate Structure 
Patent office:
USA 
Publication date patent:
12.01.2010 
Year:
2010 
Language:
de 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text