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Document type:
Konferenzbeitrag 
Contribution type:
Textbeitrag / Aufsatz 
Author(s):
Schukfeh, M.I.; Hansen, A.; Tornow, M.; Storm, K.; Thelander, K.D.; Thelander, C.; Samuelson, L.; Hinze, P.; Weimann, T.; Wanderka, N. 
Title:
Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps 
Abstract:
We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size. 
Keywords:
heterostructure nanowire; selective etching, nanogap electrodes 
Book / Congress title:
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on 
Congress (additional information):
Rome, Italy, 27-30 July 2015 2015-07 
Year:
2015 
Quarter:
3. Quartal 
Year / month:
2015-07 
Month:
Jul 
Language:
en