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Document type:
Zeitschriftenaufsatz 
Author(s):
Arcari, M.; Scarpa, G.; Lugli, P.; Tallarida, G.; Huby, N.; Guziewicz, E.; Krajekwski, T.A.; Godlewski, M. 
Title:
2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors 
Abstract:
In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high ION/IOFF ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore int...    »
 
Journal title:
Electron Devices, IEEE Transactions on (Volume:59 , Issue: 10 ) 
Year:
2012 
Year / month:
2012-10 
Quarter:
4. Quartal 
Month:
Oct 
Pages contribution:
2762--2766 
Reviewed:
ja 
Language:
en 
Publisher:
IEEE Xplore Digital Library 
Status:
Erstveröffentlichung