MOS devices go 3D, new quantum effect devices appear in the research labs. This paper discusses the impact of various innovative device architectures on circuit design. Examples of circuits with FinFETs or Multi-Gate-FETs are shown and their performance is compared with classically scaled CMOS circuits both for digital and analog applications. As an example for novel quantum effect devices beyond CMOS we discuss circuits with tunneling field effect transistors and their combination with classical MOSFETs and MuGFETS. Finally the potential of more substantial paradigm changes in circuit design will be exploited for the example of magnetic quantum cellular automata using a novel integrated magnetic field clocking scheme.     «

MOS devices go 3D, new quantum effect devices appear in the research labs. This paper discusses the impact of various innovative device architectures on circuit design. Examples of circuits with FinFETs or Multi-Gate-FETs are shown and their performance is compared with classically scaled CMOS circuits both for digital and analog applications. As an example for novel quantum effect devices beyond CMOS we discuss circuits with tunneling field effect transistors and their combination with classica...     »