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Document type:
Zeitschriftenaufsatz 
Author(s):
S Hommel, N Killat, T Schweinboeck, T Altes, F Kreupl 
Title:
Resolving Trap-caused Charges by Scanning Microwave Microscopy 
Abstract:
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/Si02 interface. 
Journal title:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 
Year:
2018 
Covered by:
Scopus 
Language:
en 
Status:
Postprint / reviewed 
TUM Institution:
Hybride Elektronische Systeme