Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Benutzer: Gast

Dokumenttyp:: Zeitschriftenaufsatz
Autor(en):: Tamersit, Khalil ; Kouzou, Abdellah ; Rodriguez, José ; Abdelrahem, Mohamed
Titel:: Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection
Stichworte:: Article ; Graphene nanoribbon (GNR) ; tunnel field-effect transistors (TFETs) ; junctionless (JL) ; quantum simulation ; band-to-band tunneling (BTBT) ; work function (WF) ; gas sensors ; electrostatics ; nanoscale
Zeitschriftentitel:: Nanomaterials
Jahr:: 2024
Band / Volume:: 14
Heft / Issue:: 2
Volltext / DOI:: doi:10.3390/nano14020220
Verlag / Institution:: MDPI
E-ISSN:: 2079-4991
Publikationsdatum:: 19.01.2024
CC-Lizenz:: by, https://creativecommons.org/licenses/by/4.0

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