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Autor(en):
Rank, E.; Weinert, U. 
Titel:
A simulation system for diffusive oxidation of silicon: A two-dimensional finite element approach 
Abstract:
A numerical approach to the simulation of two-dimensional local oxidation of silicon is presented. The key idea is the description of the oxidation as a three-component thermodynamic process involving silicon, silicon dioxide, and oxidant molecules. This results in a reactive layer of finite width, in contrast to the sharp interface between silicon and dioxide in the conventional formulation. The numerical approximation takes advantage of this description in a finite-element approach which model...    »
 
Kongress- / Buchtitel:
IEEE-Trans. on Computer-Aided Design 
Band / Teilband / Volume:
Jahr:
1990 
Serienbandnummer: