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Autor(en):
Rank, E. 
Titel:
Moving boundary problems and solution strategies in semiconductor process simulation, Computational Modelling of Free and Moving Boundary Problems 
Abstract:
One important topic in numerical semiconductor process simulation is the thermal oxidation of silicon. The process step can be described as a transient coupled system of equations for oxidant diffusion, chemical reaction and large mechanical displacement. A moving interface between oxide and silicon renders the whole system a free boundary problem. Moreover, a volume expansion during oxidation by a factor of more than two causes the overall domain of computation to change during simulation. The...    »
 
Herausgeber:
Wrobel, Brebbia 
Kongress- / Buchtitel:
Computational Mechanic Publications 
Verlagsort:
Southhampton 
Jahr:
1991