[EN] Composition of memory cell with resistance-switching layers
Dokumenttyp:
Patentanmeldung
Patentanmeldung Nr.:
CN000103168372A
Erfinder:
BANDYOPADHYAY ABHIJIT CHEN YUNG-TIN FU CHU-CHEN JAYASEKARA WIPUL PEMSIRI KAI JAMES KREUPL FRANZ MAKALA RAGHUVEER S RABKIN PETER SAMACHISA GEORGE ZHANG JINGYAN
Patentanmelder:
BANDYOPADHYAY ABHIJIT CHEN YUNG-TIN FU CHU-CHEN JAYASEKARA WIPUL PEMSIRI KAI JAMES KREUPL FRANZ MAKALA RAGHUVEER S RABKIN PETER SAMACHISA GEORGE ZHANG JINGYAN