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Document type:
Patentanmeldung 
Patent application number:
WO 2012129032 (A1) 
Inventor:
LEE SANGHYUN [US]; DUNGA MOHAN [US]; HIGASHITANI MASAAKI [US]; PHAM TUAN [US]; KREUPL FRANZ [DE] 
Assignee:
LEE SANGHYUN [US]; DUNGA MOHAN [US]; HIGASHITANI MASAAKI [US]; PHAM TUAN [US]; KREUPL FRANZ [DE] 
Title:
WO 2012129032 (A1) P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT 
Abstract:
Non-volatile storage elements having a P-/metal floating gate are disclosed herein. The floating gate may have a P-region near the tunnel oxide, and may have a metal region near the control gate. A P-region near the tunnel oxide helps provide good data retention. A metal region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also, erasing the non-volatile storage element...    »
 
Patent office:
WO 
Publication date application:
27.09.2012 
Year:
2012 
Pages:
48 pages 
Language:
en 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text