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Document type:
Zeitschriftenaufsatz 
Author(s):
André Heinzig, Stefan Slesazeck, Franz Kreupl, Thomas Mikolajick, and Walter M. Weber 
Title:
Reconfigurable Silicon Nanowire Transistors 
Abstract:
Over the past 30 years electronic applications have been dominated by complementary metal oxide semiconductor (CMOS) devices. These combine p- and n-type field effect transistors (FETs) to reduce static power consumption. However, CMOS transistors are limited to static electrical functions, i.e., electrical characteristics that cannot be changed. Here we present the concept and a demonstrator of a universal transistor that can be reversely configured as p-FET or n-FET simply by the application o...    »
 
Keywords:
Silicon nanowire; reconfigurable transistor; RFET; universal transistor; reprogrammable logic; Schottky barrier FET 
Journal title:
Nano Letters 
Year:
2012 
Journal volume:
Volume: 12 
Quarter:
1. Quartal 
Journal issue:
Issue: 1 
Pages contribution:
119-124 
Reviewed:
ja 
Language:
en 
Fulltext / DOI:
Publisher:
American Chemical Society 
Status:
published (reviewed) 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text