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LEE SANG-HYUN [KR]; DUNGA MOHAN [IN]; HIGASHITANI MASAAKI [JP]; PHAM TUAN [US]; KREUPL FRANZ [DE]
TW P-/metal floating gate non-volatile storage element
2012

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Gutsche; Martin; Kreupl; Franz ; Seidl; Harald
VERTICAL INTERCONNECT STRUCTURE, MEMORY DEVICE AND ASSOCIATED PRODUCTION METHOD
2012

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KREUPL FRANZ, DE ; SEIDEL ROBERT, DE
Semiconductor power switch having nanowires
2012

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Jacek Baranowski, Franz Kreupl
Report about Project 257829 for the European Commission
2012
12

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Christiaan Van Hoof, Franz Kreupl
Report for Project 257856
2012
11

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BANDYOPADHYAY ABHIJIT [US]; KREUPL FRANZ [US]; MIHNEA ANDREI [US]; LI XIAO [US]
EP2513994 (A2) CARBON/TUNNELING-BARRIER/CARBON DIODE
2012

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KREUPL FRANZ, DE ; SEIDEL ROBERT, DE
HALBLEITER-LEISTUNGSSCHALTER MIT NANODRÄHTEN SOWIE DAFÜR GEEIGNETES HERSTELLUNGSVERFAHREN
2012
21 Seiten

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LEE SANGHYUN [US]; DUNGA MOHAN [US]; HIGASHITANI MASAAKI [US]; PHAM TUAN [US]; KREUPL FRANZ [DE]
WO 2012129032 (A1) P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT
2012
48 pages

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COSTA XIYING, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, IN
TW 201212317 A Memory cell with resistance-switching layers
2012

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KREUPL FRANZ, DE SHRIVASTAVA RITU, US
TW 201212318 A Memory cell with resistance-switching layers and lateral arrangement
2012