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Document type:
Patent
Patent number:
US 7709827 B2
Inventor:
GRAHAM ANDREW, DE HOFMANN FRANZ, DE HOENLEIN WOLFGANG, DE KRETZ JOHANNES, DE KREUPL FRANZ, DE LANDGRAF ERHARD, DE LUYKEN JOHANNES RICHARD, DE ROESNER WOLFGANG, US SCHULZ THOMAS, US SPECHT MICHAEL, DE
Title:
Vertically integrated field-effect transistor having a nanostructure therein
Patent office:
USA
Publication date patent:
04.05.2010
Year:
2010
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
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