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Document type:
Konferenzbeitrag 
Contribution type:
Poster 
Author(s):
Tallarida, G.; Huby, N.; Kutrzeba-Kotowska, B.; Spiga, S.; Lugli, P.; Csaba, G.; Arcari, M.; Guziewicz, E.; Godlewsk, M. 
Title:
Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices 
Abstract:
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 107 and forward current density as high as 104 A/cm2 are reported. Results of the integration with NiO based switching memory elements are also shown. 
Book / Congress title:
MRS 09 – Spring Meeting Memory Workshop, 2009. IMW '09. IEEE International 
Congress (additional information):
Monterey CA USA, April 13-17, 2009 
Publisher:
IEEE Xplore Digital Library 
Year:
2009 
Quarter:
2. Quartal 
Year / month:
2009-04 
Month:
May 
Language:
en 
Format:
Text