User: Guest  Login
Document type:
Konferenzbeitrag 
Author(s):
Weber, W.M.; Geelhaar, L.; Kreupl, F.; Unger, E.; Riechert, H.; Scarpa, G.; Lugli, P. 
Title:
Ambipolar Transport in Si-Nanowire Transistors 
Abstract:
Silicon nanowires (NW) are a possible candidate for post-CMOS applications. Ultimately, p- and n-type field effect transistors (FET) are essential to enable logic operations with low power consumption. Nevertheless, the controlled doping during the NW synthesis is still an unsolved problem. We present a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region. This method does not require doping, but takes advantage of the inherent NW geometry and simply r...    »
 
Keywords:
silicon nanowires, nanodevices, transport 
Book / Congress title:
Nanotech Conference & Expo 2009 NSTI & CTSI 2009, Nanoelectronics: Research & Applications -1 
Congress (additional information):
Houston TX USA, May 3-7, 2009 
Year:
2009 
Quarter:
2. Quartal 
Year / month:
2009-05 
Month:
May 
Language:
en 
Format:
Text