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Document type:
Zeitschriftenaufsatz 
Author(s):
Schmehl, A.; Vaithyanathan, V.; Herrnberger, A.; Thiel, S.; Richter, C.; Liberati, M.; Heeg, T.; R̈ockerath, M.; Kourkoutis, L. F.; M̈uhlbauer, S.; B̈oni, P.; Muller, D. A.; Barash, Y.; Schubert, J.; Idzerda, Y.; Mannhart, J.; Schlom, D. G. 
Title:
Epitaxial Integration of the Highly Spin-Polarized Ferromagnetic Semiconductor {{EuO}} with Silicon and {{GaN}} 
Abstract:
Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semiconductors silicon and GaN, using methods that transcend these difficulties. Andreev reflection measurements...    »
 
Journal title:
Nature Materials 
Year:
2007 
Journal volume:
Month:
nov 
Journal issue:
11 
Pages contribution:
882 
Language:
en 
Print-ISSN:
1476-4660